 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| PIN Diode Chips With Offset Bond Pads MA4BPS101, MA4BPS201, MA4BPS301 MA4BPS101, MA4BPS201, MA4BPS301 PIN Diode Chips with Offset Bond Pads Features * * * * * Bond Pads Removed From Active Junction Large Bond Pads Support Multiple Bond Wires Rugged Silicon-Glass Construction Silicon Nitride Passivation Polyimide Scratch Protection Chip Layout Description These silicon - glass PIN diode chips are fabricated with M/A-COM's patented HMICTM process. They contain a single shunt silicon PIN diode embedded in a glass substrate with dual 75 x 150 micron bond pads located near the chip edges. The large pads allow use of multiple bond wires. The location of these pads on a glass substrate results in low parasitic capacitance. The diode junction is passivated with silicon nitride and a layer of polyimide has been added for scratch protection during assembly. The devices are available on industry standard tape frame for automatic insertion and assembly in high volume applications. Absolute Maximum Rating Parameter Operating Temperature Storage Temperature Forward Current Reverse Voltage Incident RF Power Mounting Temperature 1 Applications These diodes are designed for use as general PIN elements in switches and switched pad attenuators. The chips can handle up to 10 watts of RF power, and are well suited for use in T/R switches for subscriber phones, particularly the higher power and higher frequency systems for satellite based systems. They are also useful for the switching element in phased array radar applications. The larger bond pad allows for two (2) 1 mil dia contact wires which reduces the bond wire inductance almost in half. Absolute Maximum -60C to +150C -65C to +175C 100mA 70 V +40 dBm (CW) +320C for 10 seconds 1. Exceeding these limits may cause permanent damage. Electrical Specifications @ +25C Parameters Total Capacitance 1 Series Resistance 2 Parallel Resistance Breakdown Voltage 2 Carrier Lifetime 2 Thermal Impedance Symbol CT Rs Rp Vb TL jc Units pF K Volts nS C/W Test Conditions -5 Volts at 1 MHz +10 mA at 1 GHz 0 Volts at 1 GHz -10 uA +10mA/-6mA 1A/.01A, 10 mS MA4BPS101 Min. Typ. Max. 0.13 0.17 1.9 2.4 14 70 110 300 38 MA4BPS201 Min. Typ. Max. 0.20 0.25 1.0 1.3 6 70 110 300 28 MA4BPS301 Min. Typ. Max. 0.30 0.35 0.9 1.2 6 70 110 300 24 1. Guaranteed by correlation to 2 MHz on-wafer measurements. 2. Tested on a sample basis only. V2.01 M/A-COM Division of AMP Incorporated Q North America: Tel. (800) 366-2266, Fax (800) 618-8883 Q Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087 Q Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 www.macom.com AMP and Connecting at a Higher Level are trademarks. Specifications subject to change without notice. PIN Diode Chips With Offset Bond Pads MA4BPS101, MA4BPS201, MA4BPS301 Hanlding and Mounting Information Handling All semiconductor dice should be handled with care to avoid damage or contamination. For an individual die, the use of plastic tipped tweezers or vacuum pick-up tool is recommended. When using automatic pick and place, abrasion and mechanical shock should be minimized. Mounting The dice have Ti-Pt-Au back metal, with a final gold thickness of 0.1 micron. They can be die mounted with a gold-tin eutectic solder preform or conductive epoxy. The mounting surface must be clean and flat. Eutectic Die Attachment An 80/20 gold-tin eutectic solder preform is recommended with a work surface temperature of 255C and a tool tip temperature of 265C. When hot gas is applied, the tool tip temperature should be 290C. The chip should not be exposed to temperatures greater than 320C for more than 20 seconds. No more than three seconds should be required for attachment. Epoxy Die Attachment A minimum amount of epoxy should be used. A thin epoxy fillet should be visible around the perimeter of the chip after placement. Cure epoxy per manufacturer's schedule. Wire Bonding The two bond pads on these die have a Ti-Pt-Au metalization scheme, with a final gold thickness of 2.5 microns. The pads are 75 x 150 microns; up to two wires or a 100 micron wide ribbon can be bonded to each pad. Thermosonic wedge wire bonding of 0.001" diameter gold wire is recommended with a stage temperature of 150C and a force of 25 to 40 grams. Ultrasonic energy should be adjusted to the minimum required. Chip Outline Drawing (ODS-1244) INCHES DIM A B C D E F G H Notes: MIN MAX 0.019 0.0213 0.019 0.0213 0.0055 0.0063 0.0026 0.0033 0.0094 0.0102 0.007 Ref. 0.002 Ref. 0.0043 0.0055 MILLIMETERS MIN MAX 0.480 0.540 0.480 0.540 0.140 0.160 0.065 0.085 0.240 0.260 0.180 Ref. 0.050 Ref. 0.110 0.140 1. Bond pad material: 2.5 micron thick gold. 2. Shaded areas indicate wire bonding pads 3. Backside metal: 0.1 micron thick gold. Typical Resistance Curves Series Resistance vs. Forward Current at 1 GHz 100.0 Series Resistance (Ohms) Parallel Resistance vs. Reverse Voltage at 1 GHz 100,000 Parallel Resistance (Ohms) MA4BPS101 10.0 10,000 MA4BPS101 MA4BPS201 MA4BPS301 1.0 MA4BPS201 MA4BPS301 0.1 0.0 0.1 1.0 F o r w a r d C u r r e n t ( mA ) 10.0 100.0 1,000 0.0 2.0 4.0 6.0 8.0 10.0 Rever se Vol t age ( Vol t s) V2.01 M/A-COM Division of AMP Incorporated Q North America: Tel. (800) 366-2266, Fax (800) 618-8883 Q Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087 Q Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 www.macom.com AMP and Connecting at a Higher Level are trademarks. Specifications subject to change without notice. PIN Diode Chips With Offset Bond Pads MA4BPS101, MA4BPS201, MA4BPS301 Equivalent Circuits Devices Typical Forward Bias Equivalent Circuit Ls Ls Rs 10mA @ 1 GHz Ohms 1.9 1.0 0.9 Cp Ls Lv Cp Rs Cp Conditions Units MA4BPS101 MA4BPS201 MA4BPS301 Lv pF 0.03 0.03 0.03 nH 0.05 0.05 0.05 nH 0.08 0.05 0.04 Devices Typical Forward Bias Equivalent Circuit Ls Ls Conditions Cj -5V @ 1 MHz pF 0.07 0.14 0.24 Rp 0V @ 1 GHz KW 14 6 6 Cp pF 0.03 0.03 0.03 Ls Lv Cp Cj Rp Cp Units MA4BPS101 MA4BPS201 MA4BPS301 Lv nH 0.05 0.05 0.05 nH 0.08 0.05 0.04 Note: Since the spice models for PIN and PN Junctions do not accurately predict the effects of stored charge, M/A-COM does not provide Spice Parameters for PIN diodes. On wafer S-Parameter Data are available. V2.01 M/A-COM Division of AMP Incorporated Q North America: Tel. (800) 366-2266, Fax (800) 618-8883 Q Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087 Q Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 www.macom.com AMP and Connecting at a Higher Level are trademarks. Specifications subject to change without notice. PIN Diode Chips With Offset Bond Pads MA4BPS101, MA4BPS201, MA4BPS301 V2.01 M/A-COM Division of AMP Incorporated Q North America: Tel. (800) 366-2266, Fax (800) 618-8883 Q Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087 Q Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 www.macom.com AMP and Connecting at a Higher Level are trademarks. Specifications subject to change without notice. |
Price & Availability of MA4BPS201
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |